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 ESAC87M-009 (16A)
SCHOTTKY BARRIER DIODE
15.5 0.3
(90V / 16A )
Outline drawings, mm
5.5
0.3
o3.2 0.2
5.5 0.2 9.3 0.3
3.2 +0.3
2.3 0.2
2.10.3
1.6 0.3 1.1 --0.1
+0.2
20 Min
21.5
0.3
5.45 0.2
5.45 0.2
0.6 +0.2
3.5 0.2
Features
Insulated package by fully molding Low VF Super high speed switching High reliability by planer design
JEDEC EIAJ
1. Gate 2. Drain 3. Source
Connection diagram
Applications
High speed power switching
1 2 3
Maximum ratings and characteristics
Absolute maximum ratings
Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Isolating voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM V iso Io IFSM Tj Tstg tw=500ns, duty=1/40
Terminals-to-case, AC. 1min.
Conditions
Rating 90 100 1500 16* 100 -40 to +150 -40 to +150
Unit V V V A A C C
Square wave, duty=1/2 Tc=90C Sine wave 10ms
* Average forward current of centertap full wave connection
Electrical characteristics (Ta=25C Unless otherwise specified )
Item Forward voltage drop Reverse current Thermal resistance Symbol VFM IRRM Rth(j-c) Conditions IFM=6A VR=VRRM Junction to case Max. 0.9 10 2.0 Unit V mA C/W
(90V / 16A )
Characteristics
Forward characteristics
50 30 10 30 10 5 3 1
ESAC87M-009 (16A)
Reverse characteristics
IF [A]
5 3 1 0.5 0.3 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
IR [mA]
0.5 0.3 0.1 0.05 0.03 0.01 0 20 40 60 80 100 120 140
VF [V]
VR [V]
Forward power dissipation
10 4.0
Reverse power dissipation
8
3.0
WF [W]
6
WR [W]
2.0
4 1.0
2
0
0
2
4
6
8
10
0 0 20 40 60 80 100
Io [A]
VR [V]
Output current-case temperature
150 1000 500 100 300
Junction capacitance characteristics
Tc
[C ] 50
Cj [pF]
100
50 0 0 4 8 12 16 20 24 28 30 3 5 10
Io [A]
VR [V]
30
50
100
(90V / 16A )
Surge capability
300
ESAC87M-009 (16A)
100
IFSM [A] 50
30
10 1 3 5 10 30
[time] (at 50Hz)
Transient thermal impedance
101
[C/W]
100
10-1 10-3
10-2
10-1
100
101
102
t [sec.]


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